半极性LED

Ongoing LED R&D Challenges (LED droop still challenge)

DOE Solid-state Lighting Workshop, (2015)

Complete Orientational Access for Semipolar GaN Devices on Sapphire

Physica Status Solidi B, 1–13 (2015)

Semi-polar (20-21) GaN and InGaN quantum wells on sapphire substrates 

Applied Physics Letters, 104 262105 (2014)

Semi-polar (20-2-1) InGaN/GaN Light-Emitting Diodes
for High-Efficiency Solid-State Lighting

Journal of Display Technology, VOL. 9, NO. 4, APRIL 2013

High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20-21) GaN Substrates

Applied Physics Express, 3 (2010) 122102


半极性激光

High-power and High-efficiency True Green Laser Diodes

SEI Technical Review, October 2013, No.77

Ultraviolet Laser Diodes Grown on Semi-polar (20-21) GaN Substrates by Plasma-assisted Molecular Beam Epitaxy

Applied Physics Letters, 102 251101 (2013)

High-Power (over 100mW) Green Laser Diodes on Semi-polar (20-21) GaN Substrates Operating at Wavelengths beyond 530nm

Applied Physics Express, 5 (2012) 082102

Optical Polarization Characteristics of InGaN Quantum Wells for Green Laser Diodes on Semi-Polar (20-21) GaN Substrates

Applied Physics Express, 3 (2010) 011003

531nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar (20-21) Free-Standing GaN Substrates

Applied Physics Express, 2 (2009) 082101