Innovative Semiconductor Materials
Eliminating polarization effect in conventional GaN to enable next generation LEDs, lasers, and power devices.
Solving efficiency droop and green gap problems to significantly boost device performance in output power, efficiency, and wavelength stability.
Using an innovative selective growth method to directly grow semi-polar GaN on large-size sapphire wafers in standard production line.
Providing high quality semi-polar GaN on sapphire templates ready for industry adoption with minimized threading dislocations and zero stacking fault.