Saphlux produces semi-polar GaN materials to solve efficiency droop and green gap problems in LEDs and lasers.
High quality, mass-producible templates in standard wafer size to enable next generation LEDs and lasers.
We provide semi-polar GaN materials that solve fundamental limitations in current emitter materials to significantly boost output power and performance per chip.
We use an innovative selective growth method to produce GaN on a standard sapphire wafer which can be manufactured directly by current plants.
We provide the best quality semi-polar GaN on sapphire templates in the industry, with minimized threading dislocations and zero stacking fault.