Innovative Semiconductor Materials 

Eliminating polarization effect in conventional GaN to enable next generation LEDs, lasers, and power devices.

 

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high Performance 

 Solving efficiency droop and green gap problems to significantly boost device performance in output power, efficiency, and wavelength stability. 

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mass producible

Using an innovative selective growth method to directly grow semi-polar GaN on large-size sapphire wafers in standard production line.

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high quality

 Providing high quality semi-polar GaN on sapphire templates ready for industry adoption with minimized threading dislocations and zero stacking fault.


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